FERMI LEVEL POSITION AND VALENCE BAND DISCONTINUITY AT GAAS/GE INTERFACES

被引：22

作者：

KATNANI, AD

CHIARADIA, P

SANG, HW

BAUER, RS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：471 / 475

页数：5

共 37 条

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[37] PHOTOEMISSION DETERMINATION OF DIPOLE LAYER AND VB-DISCONTINUITY FORMATION DURING THE MBE GROWTH OF GAAS ON GE(110) [J].

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