SURFACE STUDIES OF EPITAXIAL BETA-SIC ON SI(100)

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] ADDAMIANO A, UNPUB

[3] BARTNING B, 1971, OPT COMMUN, V4, P78

[4] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 70 - 72

[5] EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY [J]. SURFACE SCIENCE, 1979, 80 (01) : 278 - 286

[6] SOLID-STATE REACTION OF TITANIUM AND (0001) ALPHA-SIC [J]. THIN SOLID FILMS, 1980, 72 (02) : 305 - 311

[7] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[8] DAVIS LE, 1976, HDB AUGER ELECTRON S

[9] DAVIS RC, 1982, 243027013 N CAR STAT

[10] SURFACE-ANALYSIS OF DIAMONDLIKE CARBON-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04): : 1877 - 1879

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] ADDAMIANO A, UNPUB

[3] BARTNING B, 1971, OPT COMMUN, V4, P78

[4] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 70 - 72

[5] EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY [J]. SURFACE SCIENCE, 1979, 80 (01) : 278 - 286

[6] SOLID-STATE REACTION OF TITANIUM AND (0001) ALPHA-SIC [J]. THIN SOLID FILMS, 1980, 72 (02) : 305 - 311

[7] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[8] DAVIS LE, 1976, HDB AUGER ELECTRON S

[9] DAVIS RC, 1982, 243027013 N CAR STAT

[10] SURFACE-ANALYSIS OF DIAMONDLIKE CARBON-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04): : 1877 - 1879