THE PROCESSING AND PROPERTIES OF HIGH-TC THICK-FILMS

被引:68
作者
BUTTON, TW [1 ]
ALFORD, NM [1 ]
WELLHOFER, F [1 ]
SHIELDS, TC [1 ]
ABELL, JS [1 ]
DAY, M [1 ]
机构
[1] UNIV BIRMINGHAM,SUPERCONDUCT RES GRP,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
关键词
D O I
10.1109/20.133454
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of processing conditions on the microstructure and properties of YBa2Cu3O(x) thick films on yttria stabilised zirconia substrates is reported. Films processed below the peritectic temperature are fine grained, exhibit little preferred orientation and generally have low critical currents. Above the peritectic temperature the morphology changes dramatically and large, highly textured, spherulitic crystals are observed, with an associated increase in critical current and an improved T(c). Properties in these materials are generally much better than those of bulk YBa2Cu3O(x). The relationship between microstructure and properties is shown to be complex. The influence of silver additions to the films is examined, and examples are given of thick film devices which are being evaluated.
引用
收藏
页码:1434 / 1437
页数:4
相关论文
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