LASER ETCHING OF INP IN AQUEOUS-SOLUTIONS

被引：4

作者：

SVORCIK, V

RYBKA, V

DOHNALKOVA, A

机构：

[1] Dept. of Electron. Mater., Inst. of Chem. Technol., Prague

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 09期

关键词：

D O I：

10.1088/0268-1242/6/9/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The etching of InP semiconductor stimulated by HeNe laser radiation was studied in both oxidizing and reducing environments. The etching proceeded via photochemical processes. It was proved that the etching rate is affected by the etchant concentration and by the laser light density. The effect of dopant on the etched depth was related to position of the dopant atom in the crystalographic lattice of the semiconductor.

引用

页码：942 / 944

页数：3

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