HYDROGEN-INDUCED METASTABLE CHANGES IN THE ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SILICON

被引：30

作者：

NICKEL, NH

JOHNSON, NM

VAN DE WALLE, CG

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.72.3393

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Measurements of the dark electrical conductiVitY sigma(D) performed on hydrogenated polycrystalline silicon (poly-Si:H) reveal a cooling-rate dependent metastable increase of sigma(D) below 268 K. This nonequilibrium state relaxes slowly and the time to reach equilibrium is thermally activated with E(tau) congruent-to 0.74 eV. Since thermal quenching does not affect unhydrogenated specimens, the observed metastable changes are clearly due to the formation and dissociation of an electrically active hydrogen complex. We propose that this complex consists of an isolated H atom at the bond-center site of a prestrained Si-Si bond at a grain boundary.

引用

页码：3393 / 3396

页数：4

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