12 GHZ LOW-NOISE MMIC AMPLIFIER DESIGNED WITH A NOISE MODEL THAT SCALES WITH MODFET SIZE AND BIAS

被引：14

作者：

HUGHES, B

PERDOMO, J

KONDOH, H

机构：

[1] Hewlett Packard Microwave Technology Division, Santa Rosa, CA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 12期

关键词：

D O I：

10.1109/22.260722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A scalable, bias-dependent FET noise model was developed for MMIC design. A three-stage, 12 GHz, MMIC, low-noise amplifier (LNA) was designed with the model. The LNA has a 1.6 dB noise figure and 25.6 dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm2) than previous MMIC LNA's.

引用

页码：2311 / 2316

页数：6

共 20 条

[1]

Ayaki N., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P101, DOI 10.1109/GAAS.1988.11034

[2]

Hori S., 1983, IEEE MTTS DIG, P59

[3] A TEMPERATURE NOISE MODEL FOR EXTRINSIC FETS [J].