SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE

被引：31

作者：

ASHOK, S ^{[1
]}

MOGROCAMPERO, A ^{[1
]}

机构：

[1] GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 02期

关键词：

D O I：

10.1109/EDL.1984.25828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：48 / 49

页数：2

共 12 条

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[10]

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