DIELECTRIC BEHAVIOR OF DYSPROSIUM OXIDE-FILMS

被引：76

作者：

GOSWAMI, A ^{[1
]}

VARMA, RR ^{[1
]}

机构：

[1] NATL CHEM LAB,POONA 411008,INDIA

来源：

关键词：

D O I：

10.1016/0040-6090(75)90106-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：157 / 165

页数：9

共 11 条

[1] DEKKRR AJ, 1957, SOLID STATE PHYSICS, P176
[2] ELECTRICAL BREAKDOWN IN THIN DIELECTRIC FILMS
FORLANI, F
MINNAJA, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 518 - +
[3] SPACE-CHARGE LIMITED CONDUCTION IN AMORPHOUS DY2O3 FILMS
GOSWAMI, A
VARMA, RR
[J]. THIN SOLID FILMS, 1974, 22 (01) : S2 - S4
[4] AC BEHAVIOR OF VACUUM-DEPOSITED PRASEODYMIUM OXIDE-FILMS
GOSWAMI, A
GOSWAMI, AP
[J]. THIN SOLID FILMS, 1974, 20 (01) : S3 - S6
[5] DIELECTRIC AND OPTICAL PROPERTIES OF ZNS FILMS
GOSWAMI, A
GOSWAMI, AP
[J]. THIN SOLID FILMS, 1973, 16 (02) : 175 - 185
[6] GOSWAMI AP, 1974, INDIAN J PURE AP PHY, V12, P26
[7] GOSWAMI AP, 1973, THESIS POONA U
[8] KADZHOYAN RA, 1968, IZV AN ARMSSR F, V3, P348
[9] PROPERTIES OF EVAPORATED FILM CAPACITORS
MADDOCKS, FS
THUN, RE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 99 - 103
[10] ALTERNATING CURRENT ELECTRICAL PROPERTIES OF HIGHLY DOPED INSULATING FILMS
SIMMONS, JG
NADKARNI, GS
LANCASTER, MC
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 538 - +