HETEROEPITAXIAL GROWTH OF GA0.51IN0.49P/GAAS ON SI BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

HORNG, RH

WUU, DS

LEE, MK

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2614 / 2616

页数：3

共 14 条

[1] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].

BIEGELSEN, DK ;

PONCE, FA ;

SMITH, AJ ;

TRAMONTANA, JC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859

[2] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HINO, I ;

GOMYO, A ;

KOBAYASHI, K ;

SUZUKI, T ;

NISHIDA, K .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :987-989

[3] OMVPE GROWTH OF GAINP [J].

HSU, CC ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :648-650

[4] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION [J].

HULL, R ;

FISCHERCOLBRIE, A .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :851-853

[5]

ISHIDA K, 1986, JPN J APPL PHYS 2, V25, pL288, DOI 10.1143/JJAP.25.L288

[6] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[7] GAAS HETEROEPITAXIAL GROWTH ON SI FOR SOLAR-CELLS [J].

ITOH, Y ;

NISHIOKA, T ;

YAMAMOTO, A ;

YAMAGUCHI, M .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1617-1618

[8] DOPED INGAP GROWN BY MOVPE ON GAAS [J].

IWAMOTO, T ;

MORI, K ;

MIZUTA, M ;

KUKIMOTO, H .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :27-31

[9] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[10] LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF INP USING A TRIMETHYLINDIUM-TRIMETHYLPHOSPHINE ADDUCT SOURCE [J].

LEE, MK ;

WUU, DS ;

TUNG, HH .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1805-1807

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