HETEROEPITAXIAL GROWTH OF GA0.51IN0.49P/GAAS ON SI BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

HORNG, RH

WUU, DS

LEE, MK

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2614 / 2616

页数：3

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