TRACER IMPURITY DIFFUSION IN SINGLE-CRYSTAL RUTILE (TIO2-X)

The authors present measurements of impurity tracer diffusion in rutile as functions of crystal orientation, temperature, charge state of the impurity ion, oxygen partial pressure, and amount of Al impurity. These results provide insight into the importance of open channels for diffusion in rutile and identify the most probable impurity-diffusion mechanisms. Since the defect structure of the diffusion results, the defect structure as functions of p(O//2), impurity content and temperature is discussed in the next section, before the results of the diffusion measurements are presented.