5-PARAMETER DC GAAS-MESFET MODEL FOR NONLINEAR CIRCUIT-DESIGN

被引:16
作者
RODRIGUEZTELLEZ, J
ENGLAND, PJ
机构
[1] Univ of Bradford, Bradford
来源
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1992年 / 139卷 / 03期
关键词
GALLIUM ARSENIDE; MESFET; MODELING;
D O I
10.1049/ip-g-2.1992.0053
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An improved gallium arsenide (GaAs) MESFET model for nonlinear large-signal circuit design is described, together with the parameter estimation and optimisation techniques. The new model is based on the work of Curtice and offers significant advantages in the simulation of the device in the low-current region. This is achieved by modelling the bias dependency of the pinch-off voltage. Data showing the bias dependency of the device model parameters is provided and a comparison between the new model, the Curtice model and the Schichman-Hodges FET model is made, with the use of a wide variety of different size devices. The software modules for the automated characterisation and modelling of GaAs devices are also described.
引用
收藏
页码:325 / 332
页数:8
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