DIRECT MEASUREMENT OF THE CARRIER LEAKAGE OUT OF THE ACTIVE-REGION IN INGAASP/INP LASER HETEROSTRUCTURES

被引：21

作者：

BELENKY, GL

KAZARINOV, RF

LOPATA, J

LURYI, S

TANBUNELK, T

GARBINSKI, PA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 02期

关键词：

D O I：

10.1109/16.370077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Leakage of electrons out of the active region of InGaAsP/InP laser heterostructures at different temperatures was measured by a purely electrical method. Comparison of the obtained results with the results of modeling indicates that special attention should be paid to the acceptor doping levels in the p cladding layer immediately adjacent the active region. Lower acceptor concentration may lead to unacceptably high thermionic leakage.

引用

页码：215 / 218

页数：4

共 10 条

[1] MEASUREMENT OF THE EFFECTIVE TEMPERATURE OF MAJORITY CARRIERS UNDER INJECTION OF HOT MINORITY-CARRIERS IN HETEROSTRUCTURES
BELENKY, GL
KASTALSKY, A
LURYI, S
GARBINSKI, PA
CHO, AY
SIVCO, DL
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2247 - 2249
[2] DIRECT MEASUREMENT OF THE CARRIER LEAKAGE IN AN INGAASP INP LASER
CHEN, TR
MARGALIT, S
KOREN, U
YU, KL
CHIU, LC
HASSON, A
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1000 - 1002
[3] A THEORETICAL-ANALYSIS OF AUGER RECOMBINATION INDUCED ENERGETIC CARRIER LEAKAGE IN GAINASP-INP DOUBLE HETEROJUNCTION LASERS AND LIGHT-EMITTING DIODES
CHIK, KD
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4688 - 4698
[4] GARBUZOV DZ, 1991, SOV PHYS SEMICOND+, V25, P560
[5] GRINBERG AA, 1994, J APPL PHYS APR
[6] KAZARINOV RF, IN PRESS IEEE J QUAN
[7] KETELSEN LJP, IN PRESS CARRIER LOS
[8] BAND-GAP ENHANCED CARRIER HEATING IN INGAASP/INP DOUBLE HETEROSTRUCTURE LIGHT-EMITTING-DIODES
WADA, O
YAMAKOSHI, S
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 981 - 983
[9] DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE
YAMAKOSHI, S
SANADA, T
WADA, O
UMEBU, I
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 144 - 146
[10] ZHUANG WH, 1985, IEEE J QUANTUM ELECT, V21, P712, DOI 10.1109/JQE.1985.1072699

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