THEORETICAL CONSIDERATION ON DIMER VACANCY IMAGES IN THE STM OBSERVATIONS OF SI(001) SURFACES IN TERMS OF THE ADSORPTION OF O2 MOLECULES

被引：13

作者：

HOSHINO, T

TSUDA, M

OIKAWA, S

OHDOMARI, I

机构：

[1] CHIBA UNIV,FAC PHARMACEUT SCI,PHYS CHEM LAB,CHIBA 260,JAPAN

[2] WASEDA UNIV,KAGAMI MEM LAB MAT SCI & TECHNOL,SHINJUKU KU,TOKYO 169,JAPAN

来源：

SURFACE SCIENCE | 1993年 / 291卷 / 03期

关键词：

D O I：

10.1016/0039-6028(93)90447-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Geometric and electronic structures of dimers on the Si(001)-2 x 1 reconstructed surfaces before and after O2 adsorption have been investigated with an ab initio molecular orbital (MO) calculation at the Hartree-Fock level. The theoretically predicted electron tunneling current in the dimer before and after O2 adsorption has strongly suggested that the O2-adsorbed dimer on clean Si(001) surfaces is observed as dark in the scanning tunneling microscope (STM) images. The dark spot images which have so far been recognized to be a dimer vacancy type defect could be due to the O2 adsorption in parallel to a Si dimer.

引用

页码：L763 / L767

页数：5

共 19 条

[1] PROBING THE CHEMISTRY AND MANIPULATING SURFACES AT THE ATOMIC SCALE WITH THE STM [J].

AVOURIS, P ;

LYO, IW .

APPLIED SURFACE SCIENCE, 1992, 60-1 :426-436

[2] THEORETICAL SCANNING TUNNELING MICROSCOPY AND ATOMIC FORCE MICROSCOPY STUDY OF GRAPHITE INCLUDING TIP SURFACE INTERACTION [J].

BATRA, IP ;

CIRACI, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :313-318

[3] KINETICS OF THE ADSORPTION OF O-2 AND OF THE DESORPTION OF SIO ON SI(100) - A MOLECULAR-BEAM, XPS, AND ISS STUDY [J].

DEVELYN, MP ;

NELSON, MM ;

ENGEL, T .

SURFACE SCIENCE, 1987, 186 (1-2) :75-114

[4] SELF-CONSISTENT MOLECULAR-ORBITAL METHODS .22. SMALL SPLIT-VALENCE BASIS-SETS FOR 2ND-ROW ELEMENTS [J].

GORDON, MS ;

BINKLEY, JS ;

POPLE, JA ;

PIETRO, WJ ;

HEHRE, WJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1982, 104 (10) :2797-2803

[5] IMAGING OF CHEMICAL-BOND FORMATION WITH THE SCANNING TUNNELING MICROSCOPE - NH3 DISSOCIATION ON SI(001) [J].

HAMERS, RJ ;

AVOURIS, P ;

BOZSO, F .

PHYSICAL REVIEW LETTERS, 1987, 59 (18) :2071-2074

[6] A SCANNING TUNNELING MICROSCOPY STUDY OF THE REACTION OF SI(001)-(2X1) WITH NH3 [J].

HAMERS, RJ ;

AVOURIS, P ;

BOZSO, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :508-511

[7] ELECTRONIC AND GEOMETRIC STRUCTURE OF SI(111)-(7X7) AND SI(001) SURFACES [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

SURFACE SCIENCE, 1987, 181 (1-2) :346-355

[8] DETERMINATION OF THE LOCAL ELECTRONIC-STRUCTURE OF ATOMIC-SIZED DEFECTS ON SI(001) BY TUNNELING SPECTROSCOPY [J].

HAMERS, RJ ;

KOHLER, UK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2854-2859

[9] SCANNING TUNNELING MICROSCOPY OF SI(001) [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357

[10] INITIAL-STAGES OF OXYGEN-ADSORPTION ON SI(111) .2. THE MOLECULAR PRECURSOR [J].

HOFER, U ;

MORGEN, P ;

WURTH, W ;

UMBACH, E .

PHYSICAL REVIEW B, 1989, 40 (02) :1130-1145

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