FEMTOSECOND ELECTRON AND HOLE THERMALIZATION IN ALGAAS

被引:33
作者
BRADLEY, CWW
TAYLOR, RA
RYAN, JF
机构
[1] Oxford Univ, United Kingdom
关键词
Phonons - Semiconductor Materials - Charge Carriers;
D O I
10.1016/0038-1101(89)90209-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Femtosecond optical absorption spectra of AlxGa1-xAs reveal rapid thermalisation of the electron-hole plasma to a two-temperature carrier distribution after approx. 500fs. The carriers thermalise to a single-temperature distribution at approx. 10ps. Single phonon emission by electrons is observed at early times when the carrier density is low. Theoretical calculations which model analytically the principal carrier-carrier and carrier-phonon interactions responsible for thermalisation give good agreement with the data.
引用
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页码:1173 / 1177
页数:5
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