FAR-INFRARED ABSORPTION BY EXCITONS IN SILICON

被引：18

作者：

TIMUSK, T

NAVARRO, H

LIPARI, NO

ALTARELLI, M

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 25卷 / 04期

关键词：

D O I：

10.1016/0038-1098(78)90216-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：217 / 219

页数：3

共 12 条

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[7] NEW METHOD IN THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS [J].

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[8]

LIPARI NO, 1973, PHYS REV B, V8, P2497

[9] CONDENSATION OF NONEQUILIBRIUM CHARGE-CARRIERS IN SEMICONDUCTORS [J].

POKROVSKII, Y .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (02) :385-+

[10] VALLEY-ORBIT SPLITTING OF FREE EXCITONS - ABSORPTION EDGE OF SI [J].

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PHYSICAL REVIEW LETTERS, 1970, 24 (17) :942-&

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