IDEAL RESISTIVITY OF BISMUTH-ANTIMONY ALLOYS AND ELECTRON-ELECTRON INTERACTION

被引:37
作者
FENTON, EW
JAN, JP
KARLSSON, A
SINGER, R
机构
[1] National Research Council of Canada, Ottawa
来源
PHYSICAL REVIEW | 1969年 / 184卷 / 03期
关键词
D O I
10.1103/PhysRev.184.663
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The magnitude of a T2 term occurring in the low-temperature electrical resistivity of bismuth and bismuth-antimony alloys has been measured. Antimony concentrations were less than 3 at.%. The rate of increase of this term with increasing antimony concentration (decreasing free-carrier concentration) suggests that it may be associated with electron-electron scattering due to an interaction which is appreciably phonon-mediated (Fröhlich-BCS type). © 1969 The American Physical Society.
引用
收藏
页码:663 / &
相关论文
共 38 条