TEMPERATURE-DEPENDENCE OF THE DIRECT ENERGY-GAP IN ALXGA1-XAS

被引:6
作者
NEUMANN, H
HORIG, W
BOUAMAMA, K
RIEDE, V
VONKODING, H
机构
[1] Fachbereich Physik, Universität Leipzig
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 171卷 / 02期
关键词
D O I
10.1002/pssb.2221710227
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
[No abstract available]
引用
收藏
页码:K79 / K84
页数:6
相关论文
共 19 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[3]   OPTICAL-PROPERTIES OF ALXGA1-XAS [J].
ASPNES, DE ;
KELSO, SM ;
LOGAN, RA ;
BHAT, R .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767
[4]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[5]   DIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS [J].
BOSIO, C ;
STAEHLI, JL ;
GUZZI, M ;
BURRI, G ;
LOGAN, RA .
PHYSICAL REVIEW B, 1988, 38 (05) :3263-3268
[6]   HIGH-PRECISION DETERMINATION OF THE TEMPERATURE-DEPENDENCE OF THE FUNDAMENTAL ENERGY-GAP IN GALLIUM-ARSENIDE [J].
GRILLI, E ;
GUZZI, M ;
ZAMBONI, R ;
PAVESI, L .
PHYSICAL REVIEW B, 1992, 45 (04) :1638-1644
[7]  
HORIG W, 1992, CRYSTAL RES TECHNOL, V27
[8]   PHOTOREFLECTANCE, ABSORPTION, AND NUCLEAR-RESONANCE REACTION STUDIES OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
HUANG, D ;
JI, G ;
REDDY, UK ;
MORKOC, H ;
XIONG, F ;
TOMBRELLO, TA .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) :5447-5453
[9]   INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE [J].
LAUTENSCHLAGER, P ;
GARRIGA, M ;
LOGOTHETIDIS, S ;
CARDONA, M .
PHYSICAL REVIEW B, 1987, 35 (17) :9174-9189
[10]   TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION AND THE INTERBAND CRITICAL-POINT PARAMETERS OF ALXGA1-XAS [J].
LOGOTHETIDIS, S ;
CARDONA, M ;
GARRIGA, M .
PHYSICAL REVIEW B, 1991, 43 (14) :11950-11965