共 19 条
[4]
SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS
[J].
PHYSICAL REVIEW B,
1973, 7 (10)
:4605-4652
[5]
DIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS
[J].
PHYSICAL REVIEW B,
1988, 38 (05)
:3263-3268
[6]
HIGH-PRECISION DETERMINATION OF THE TEMPERATURE-DEPENDENCE OF THE FUNDAMENTAL ENERGY-GAP IN GALLIUM-ARSENIDE
[J].
PHYSICAL REVIEW B,
1992, 45 (04)
:1638-1644
[7]
HORIG W, 1992, CRYSTAL RES TECHNOL, V27
[9]
INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE
[J].
PHYSICAL REVIEW B,
1987, 35 (17)
:9174-9189
[10]
TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION AND THE INTERBAND CRITICAL-POINT PARAMETERS OF ALXGA1-XAS
[J].
PHYSICAL REVIEW B,
1991, 43 (14)
:11950-11965