PHOTOEMISSION-STUDY OF HYDROGEN ADSORPTION ON VANADIUM DIOXIDE NEAR THE SEMICONDUCTOR-METAL PHASE-TRANSITION

被引:29
作者
BERMUDEZ, VM [1 ]
WILLIAMS, RT [1 ]
LONG, JP [1 ]
REED, RK [1 ]
KLEIN, PH [1 ]
机构
[1] WAKE FOREST UNIV,DEPT PHYS,WINSTON SALEM,NC 27109
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 16期
关键词
D O I
10.1103/PhysRevB.45.9266
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The valence-band ultraviolet photoemission spectrum of VO2 has been studied above and below the semiconductor-metal phase-transition temperature (almost-equal-to 340 K) as a function of exposure to hydrogen. Evidence is found for a partial reduction of the surface, leading to formation of adsorbed OH and an increase in the V 3d-electron density. The adsorbed hydrogen appears to impede the phase transition within the photoemission sampling depth. A model for this effect is suggested, based on an increased V-O pi-bonding interaction.
引用
收藏
页码:9266 / 9271
页数:6
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