NOVEL WETTING BEHAVIOR OF HE-4 ON CESIUM

被引:114
作者
TABOREK, P
RUTLEDGE, JE
机构
[1] Department of Physics, University of California, Irvine
关键词
D O I
10.1103/PhysRevLett.68.2184
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have measured He-4 adsorption isotherms on a cesium substrate above and below T-lambda using a quartz microbalance technique. The results show that the cesium surface remains dry until the pressure almost reaches the saturated vapor pressure. At liquid-vapor coexistence, however, the wetting film continuously thickens to more than 30 layers. Below T-lambda the film at coexistence is superfluid. Above T-lambda we resolve a feature in the isotherm just below saturated vapor pressure which is characteristic of a prewetting transition.
引用
收藏
页码:2184 / 2187
页数:4
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