COMPARISON OF THE HYSTERESIS OF TA2O5 AND SI3N4 PH-SENSING INSULATORS

被引:166
作者
BOUSSE, L [1 ]
MOSTARSHED, S [1 ]
VANDERSCHOOT, B [1 ]
DEROOIJ, NF [1 ]
机构
[1] UNIV NEUCHATEL,INST MICROTECHNOL,CH-2000 NEUCHATEL,SWITZERLAND
关键词
D O I
10.1016/0925-4005(94)87044-6
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
It has been shown that the accuracy of pH sensor devices based on insulator/electrolyte interfaces is limited by a slow response, which manifests itself as hysteresis and drift. In this paper, we use hysteresis measurements to compare the performance of Ta2O5 and Si3N4 as pH-sensing surfaces. The results depend on the time taken to perform a complete pH loop. At short loop times (960-9600 s) Ta2O5 is superior to Si3N4, by a factor of at least five. At longer loop times, Ta2O5 starts showing more hysteresis, and its advantage over Si3N4 is reduced. These data can be combined with earlier measurements of the hysteresis of Al2O3 surfaces to establish the following order of hysteresis magnitude at a loop time of 1920 s: Si3N4 > Al2O3 > Ta2O5.
引用
收藏
页码:157 / 164
页数:8
相关论文
共 30 条
[1]   CHEMICAL-SENSITIVITY OF AN ISFET WITH TA2O5 MEMBRANE IN STRONG ACID AND ALKALINE-SOLUTIONS [J].
BOBROV, PV ;
TARANTOV, YA ;
KRAUSE, S ;
MORITZ, W .
SENSORS AND ACTUATORS B-CHEMICAL, 1991, 3 (01) :75-81
[2]   THE INFLUENCE OF COUNTERION ADSORPTION ON THE PSI-0/PH CHARACTERISTICS OF INSULATOR SURFACES [J].
BOUSSE, L ;
DEROOIJ, NF ;
BERGVELD, P .
SURFACE SCIENCE, 1983, 135 (1-3) :479-496
[3]   BIOSENSORS FOR DETECTION OF ENZYMES IMMOBILIZED IN MICROVOLUME REACTION CHAMBERS [J].
BOUSSE, L ;
KIRK, G ;
SIGAL, G .
SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) :555-560
[4]  
BOUSSE L, 1986, ACS SYM SER, V323, P79
[5]   ZETA POTENTIAL MEASUREMENTS OF TA2O5 AND SIO2 THIN-FILMS [J].
BOUSSE, L ;
MOSTARSHED, S ;
VANDERSHOOT, B ;
DEROOIJ, NF ;
GIMMEL, P ;
GOPEL, W .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1991, 147 (01) :22-32
[6]   THE ROLE OF BURIED OH-SITES IN THE RESPONSE MECHANISM OF INORGANIC-GATE PH-SENSITIVE ISFETS [J].
BOUSSE, L ;
BERGVELD, P .
SENSORS AND ACTUATORS, 1984, 6 (01) :65-78
[7]   TIME-DEPENDENCE OF THE CHEMICAL RESPONSE OF SILICON-NITRIDE SURFACES [J].
BOUSSE, L ;
HAFEMAN, D ;
TRAN, N .
SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) :361-367
[8]   HYSTERESIS IN AL2O3-GATE ISFETS [J].
BOUSSE, L ;
VANDENVLEKKERT, HH ;
DEROOIJ, NF .
SENSORS AND ACTUATORS B-CHEMICAL, 1990, 2 (02) :103-110
[9]  
BOUSSE L, 1992, EVALUATION SENSING S, P817
[10]  
BOUSSE L, 1992, CHEM SENSOR TECHNOLO, V4, P145