HYDROGEN STATES IN AMORPHOUS-GE

被引：7

作者：

CHOO, FC ^{[1
]}

TONG, BY ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON N6A 3K7,ONTARIO,CANADA

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1016/0038-1098(78)90081-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The removal of dangling bond states from the energy gaps of tetrahedrally bonded amorphous semiconductor is not the only effect when hydrogen is introduced. In addition to the bonding states deep in the valence band, we found that there are anti-bonding states appearing in the conduction band and near the bottom of the conduction band and, in some cases, even in the gap, as first conjectured by Paul et al. These latter states affect transport properties significantly as observed in photoconductivity. © 1978.

引用

页码：385 / 387

页数：3

共 14 条

[1]

ANDERSON DA, 1977, 7TH INT C AM LIQ SEM

[2] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[3]

CARLSON DE, 1977, 7TH INT C AM LIQ SEM

[4]

CHOO FC, 1977, 7TH INT C AM LIQ SEM

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[7] USE OF HYDROGENATION IN STUDY OF TRANSPORT PROPERTIES OF AMORPHOUS-GERMANIUM [J].

LEWIS, AJ .

PHYSICAL REVIEW B, 1976, 14 (02) :658-668

[8] SEMI-EMPIRICAL LCAO BAND STRUCTURES [J].

MESSMER, RP .

CHEMICAL PHYSICS LETTERS, 1971, 11 (05) :589-&

[9] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].

MOUSTAKAS, TD ;

ANDERSON, DA ;

PAUL, W .

SOLID STATE COMMUNICATIONS, 1977, 23 (03) :155-158

[10] TETRAHEDRALLY COORDINATED RANDOM-NETWORK STRUCTURE [J].

POLK, DE ;

BOUDREAUX, DS .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :92-95

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