CASTING OF UNDOPED CDTE CRYSTALS WITH HIGH ELECTRICAL-RESISTIVITY

被引：13

作者：

RUDOLPH, P

KAWASAKI, S

YAMASHITA, S

USUKI, Y

KONAGAYA, Y

MATADA, S

YAMAMOTO, S

FUKUDA, T

机构：

[1] TOHOKU UNIV,INST MAT RES,AOBA KU,SENDAI,MIYAGI 980,JAPAN

[2] NIHON KESSHO KOGAKU CO LTD,TATEBAYASHI,GUNMA 374,JAPAN

[3] FURUKAWA CO LTD,IWAKI,FUKUSHIMA,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 149卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(95)00039-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Undoped semi-insulating CdTe crystals with an as-grown shape similar to the device profile for radiation detection has been grown by casting and subsequent unidirectional solidification. Crystals with maximum electrical resistivity of 5.7 x 10(10) Omega . cm and an average value of 5 x 10(9) Omega . cm have been grown in a die of uncoated fused silica. Neither Cd source nor an inert gas overpressure was employed in the growth container. No additional preparation steps were required before the analysis of their detection behaviour. First measurements of the integral X-ray response have been carried out.

引用

页码：201 / 206

页数：6

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