THE STABILITY OF FRENKEL PAIRS AND GROUP-V INTERSTITIALS IN ELECTRON-IRRADIATED GAAS AND GAP

被引：12

作者：

MURRAY, R

NEWMAN, RC

WOODHEAD, J

机构：

[1] Univ of Reading, Reading, Engl, Univ of Reading, Reading, Engl

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1987年 / 2卷 / 07期

关键词：

ATOMS - Diffusion - ELECTRON BEAMS - INFRARED RADIATION - Absorption - SEMICONDUCTING GALLIUM COMPOUNDS - Radiation Effects;

D O I：

10.1088/0268-1242/2/7/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

B//G//a impurity atoms selectively trap mobile group V interstitials to form defects designated B(1) centres in both GaAs and GaP during 2 MeV electron irradiation at room temperature. The production of these centres has been measured in both n-type and p-type material by infrared absorption and compared with a model proposed by Pons and Bourgoin relating to radiation-enhanced diffusion of the interstitial atoms. Our results imply, however, that the dissociation of Frenkel pairs produced on the group V sublattice as primary defects controls the process. The Frenkel pairs are stable in n-type material but not in p-type or high-resistivity material.

引用

页码：399 / 403

页数：5