SURFACE SELF-DIFFUSION OF SI ON SI(001)

被引：234

作者：

MO, YW ^{[1
]}

KLEINER, J ^{[1
]}

WEBB, MB ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,MADISON,WI 53706

来源：

SURFACE SCIENCE | 1992年 / 268卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(92)90968-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface diffusion coefficient of Si atoms on a Si(001) surface is quantitatively determined using scanning tunneling microscopy. The method rests on counting the number of islands that form at various substrate temperatures for a given deposited dose at a given deposition rate. In the simplest situation, the diffusion coefficient is related to the island density by N proportional-to D-1/3 and to the width of denuded zones at steps by W(DZ) proportional-to D1/6. The activation energy for diffusion is E(a) = 0.67 +/- 0.08 eV and D0 congruent-to 10(-3) +/- 1 cm2. The diffusion is highly anisotropic, with the fast direction along the dimer rows.

引用

页码：275 / 295

页数：21

共 54 条

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