SURFACE IMAGING AND DRY DEVELOPMENT FOR E-BEAM LITHOGRAPHY

被引：3

作者：

BAIK, KH

JONCKHEERE, R

SEABRA, A

VANDENHOVE, L

机构：

[1] IMEC v.z.w., B-3001 Leuven

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90054-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe our investigation on positive tone gas phase silylation for E-beam exposure using the chemically amplified resist SAL601-ER 7. 1,1,3,3-tetra methyl disilazane (TMDS) was used as silylating agent. The exposure by electron beam followed by a pre- silylation-bake results in acid catalysed crosslinking which effectively blocks the silylation of the exposed areas. This results in positive tone images. Promising results have been obtained using this process. © 1992.

引用

页码：269 / 273

页数：5

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