SURFACE DYNAMICS OF MONOATOMIC STEPS ON SI(001) STUDIED WITH A HIGH-TEMPERATURE SCANNING TUNNELING MICROSCOPE

被引：54

作者：

ZANDVLIET, HJW

ELSWIJK, HB

VANLOENEN, EJ

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

SURFACE SCIENCE | 1992年 / 272卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91448-K

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A recently developed, thermally stable scanning tunneling microscope (STM) allows the observation of surfaces at elevated temperatures, up to at least 850 K. We used this STM to study the dynamic behaviour of monoatomic steps on vicinal Si(001). Steps are pinned at surface defects. At unpinned positions, kinks in the step edges change on a time scale of seconds at a temperature of 725 K. We deduce a value of 2.0 eV for the kink detachment energy of the free kinks. Images with dimer-row resolution of Si(001) are obtained for temperatures up to 725 K. Above 850 K the images of the surface steps become fuzzy because of their motion during image acquisition.

引用

页码：264 / 268

页数：5

共 20 条

[1] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].