THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS

被引：30

作者：

CHANG, LL

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 12期

关键词：

D O I：

10.1016/0038-1101(64)90063-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：853 / 859

页数：7

共 14 条

[1]

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[2]

CHAMBERS WF, 1962, Q RES REV

[3] SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (01) :23-&

[4] DIFFUSION + SOLUBILITY OF ZINC IN GALLIUM PHOSPHIDE SINGLE CRYSTALS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :374-&

[5] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&

[6] DIFFUSION AND SOLUBILITY OF ZINC IN INDIUM PHOSPHIDE [J].

CHANG, LL ;

CASEY, HC .

SOLID-STATE ELECTRONICS, 1964, 7 (06) :481-&

[7]

Crank J, 1956, MATH DIFFUSION, P347

[8] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].

CUNNELL, FA ;

GOOCH, CH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133

[9] DIFFUSION OF IMPURITIES IN GERMANIUM [J].

DUNLAP, WC .

PHYSICAL REVIEW, 1954, 94 (06) :1531-1540

[10] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].

LONGINI, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :127-130

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