20-GB/S MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR 1.55-MU-M APPLICATIONS

被引：45

作者：

LUNARDI, LM ^{[1
]}

CHANDRASEKHAR, S ^{[1
]}

GNAUCK, AH ^{[1
]}

BURRUS, CA ^{[1
]}

HAMM, RA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 10期

关键词：

D O I：

10.1109/68.466590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A photoreceiver, composed of a p-i-n photodetector monolithically integrated with an InP-InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier, has been fabricated from metal-organic molecular beam epitaxy (MOMBE) material. The fiber-pigtailed module has measured sensitivities of -20.4 dBm and -17.0 dBm for data rates of 10 Gb/s and 20 Gb/s, respectively, at a bit-error-rate of 1 x 10(-9). High-speed operation has been achieved with modest (3 mu m) device dimensions. These results are the best ever reported for an OEIC photoreceiver at these speeds.

引用

页码：1201 / 1203

页数：3

共 7 条

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