EFFECT OF SURFACE TREATMENTS ON SILICON HALL MEASUREMENTS

被引：9

作者：

COLMAN, D

KENDALL, DL

机构：

[1] Texas Instruments Incorporated, Dallas

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 11期

关键词：

D O I：

10.1063/1.1657250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

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页码：4662 / &

相关论文

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[1] THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON
BEAN, KE
HENTZSCHEL, HP
COLMAN, D
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2358 - +
[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON
BUCK, TM
MCKIM, FS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714
[3] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE
PETRITZ, RL
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262
[4] Putley E.H., 1960, HALL EFFECT RELATED, P110
[5] RUNYAN WR, 1965, SILICON SEMICONDUCTO, P179