ON STATIC COLLECTOR-EMITTER SATURATION VOLTAGE OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR

被引：8

作者：

CHUDOBIAK, WJ

机构：

[1] Communications Laboratory, Defence Research Telecommun. Establ., Defence Research Board, Ottawa 4, Ontario

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 04期

关键词：

D O I：

10.1109/PROC.1969.7048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A one-dimensional analysis which defines the static collector-emitter saturation voltage characteristic of epitaxial and triple-diffused transistors in terms of collector current, base current, and device parameters is given. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：718 / +

页数：1

共 6 条

[1] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J].

BEALE, JRA ;

SLATTER, JAG .

SOLID-STATE ELECTRONICS, 1968, 11 (02) :241-+

[2]

CHUDOBIAK WJ, TO BE PUBLISHED

[3] SATURATION CHARACTERISTICS OF HIGH-VOLTAGE TRANSISTORS [J].

HAHN, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1384-&

[4]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[5]

LARIN F, 1968, RADIATION EFFECTS SE

[6]

POON HC, 1968, OCT IEEE INT EL DEV

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