NONSTOICHIOMETRY AND MIXED CONDUCTION IN ALPHA-TA2O5

被引：2

作者：

CHOI, GM ^{[1
]}

TULLER, HL ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CRYSTAL PHYS & OPT ELECTR LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 06期

关键词：

electronic conduction; ionic conductors; models; oxygen partial pressure; tantalum;

D O I：

10.1111/j.1151-2916.1990.tb09815.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical conductivity of single‐crystal and polycrystalline Ta2O5 was measured as a function of composition, temperature, and oxygen partial pressure (PO2) by both dc and ac complex impedance methods. A defect model based on the assumption of predominant disorder on the oxygen sublattice is proposed to explain the observed nonstoichiometry of α‐Ta2O5. The defect model is consistent with the observed PO2‐independent ionic conductivity and the P−1/4O2‐dependent electronic conductivity. Blocking of the ionic component was observed at low PO2. Both the electronic and ionic components of conductivity were found to decrease with time. This aging phenomena is related to destabilization of the a phase. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：1700 / 1704

页数：5

共 16 条

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