SCANNING TUNNELING MICROSCOPY ON CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS

被引：36

作者：

BUSMANN, HG ^{[1
]}

SPRANG, H ^{[1
]}

HERTEL, IV ^{[1
]}

ZIMMERMANNEDLING, W ^{[1
]}

GUNTHERODT, HJ ^{[1
]}

机构：

[1] UNIV BASEL,INST PHYS,CH-4056 BASEL,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.105602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied chemical vapor deposited diamond films by scanning tunneling microscopy. The films have been prepared in a hot-filament reactor. The gas, a mixture of 1% methane and 99% hydrogen, is fed into the reactor by a pulsed high pressure valve. Growth rates of 1.5-mu-m/h were obtained. The films are defined by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray diffraction. On a scale similar to those normally found in SEM micrographs a 110 texture is shown. On smaller scales amorphous structures with typical sizes less than 100 nm and individual equally sized clusters of approximately 5 nm in diameter are observed.

引用

页码：295 / 297

页数：3

共 9 条

[1]

BACHMANN PK, 1991, NATO ASI STUDIES S B, V266

[2] SILVER FILMS CONDENSED AT 300-K AND 90-K - SCANNING TUNNELING MICROSCOPY OF THEIR SURFACE-TOPOGRAPHY [J].