A 1.45-W/MM, 30-GHZ INP-CHANNEL POWER HEMT

被引：16

作者：

AINA, O

BURGESS, M

MATTINGLY, M

MEERSCHAERT, A

OCONNOR, JM

TONG, M

KETTERSON, A

ADESIDA, I

机构：

[1] ALLIED SIGNAL AEROSP CO,COLUMBIA,MD 21045

[2] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECT,URBANA,IL 61801

[3] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.145060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. We show that the estimated power performance of this device at the highest frequencies is better than for any other three-terminal devices because the f, of the power HEMT is high, even at high drain-source bias.

引用

页码：300 / 302

页数：3

共 12 条

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