VARIATION OF FIELD EFFECT MOBILITY AND HALL EFFECT MOBILITY WITH THE THICKNESS OF THE DEPOSITED FILMS OF TELLURIUM

被引：15

作者：

GHOSH, SK

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(61)90057-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：61 / 65

页数：5

共 7 条

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[2] GODEFROY L, 1956, PROGR SEMICONDUCTORS, V1, P159
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LOW, GGE
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 10 - 16
[4] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS
SCHRIEFFER, JR
[J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646
[5] SONDHEIMER EH, 1952, ADV PHYS, V1, P11
[6] THE ELECTRON-MICROGRAPHIC STRUCTURE OF SHADOW-CAST FILMS AND SURFACES
WILLIAMS, RC
BACKUS, RC
[J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (01) : 98 - 106
[7] WOODS JF, 1956, PHOTOCONDUCTIVITY C, P636