SELF-CONSISTENT CALCULATION OF ELECTRON-DENSITY IN A 2-CHANNEL MODULATION-DOPED STRUCTURE

被引：9

作者：

PATIL, MB

MORKOC, H

机构：

[1] Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 01期

关键词：

D O I：

10.1016/0038-1101(90)90016-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method of self-consistent calculation of energy levels, electron density and conduction band-edge profile is described. Schrödinger's equation is solved by using a variational approach that reduces it to a matrix equation. The solution of the matrix eigenvalue problem gives all the solutions and eigenenergies for a given conduction band-edge profile. Poisson's equation is then solved to get the new profile and the procedure is repeated till convergence is reached. The results of application of this method to two structures are described. One is a single-channel modulation-doped structure and the other is a two-channel modulation doped structure. The calculation is carried out for the AlGaAs-GaAs material system. The implications of this calculation on device performance are pointed out. The two-channel structure is expected to result in higher drain currents but about the same transconductance value as the single-channel structure. Possible complications in applying this procedure to more complex structures are discussed. © 1990.

引用

页码：99 / 104

页数：6

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