ELECTRON-HOLE ENERGY SHIFTS IN NARROW GAAS/ALAS QUANTUM-WELLS - INHOMOGENEOUS BROADENING DUE TO HALF-MONOLAYER WELL-WIDTH FLUCTUATIONS

被引：8

作者：

FU, WS ^{[1
]}

OLBRIGHT, GR ^{[1
]}

OWYOUNG, A ^{[1
]}

KLEM, JF ^{[1
]}

BIEFELD, RM ^{[1
]}

HADLEY, GR ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 14期

关键词：

D O I：

10.1063/1.103448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use absorption, photoluminescence, and x-ray diffraction spectra of two GaAs/AlAs type II heterostructures, whose GaAs well thicknesses differ by ≅4 Å to obtain a direct measurement of the individual quantum confinement energy shifts of the heavy hole, light hole, and electron levels. We find that excitonic absorption linewidths are dominated by inhomogeneous broadening that arises from half-monolayer well-thickness fluctuations. For self-consistency these shifts are applied to separately determine the individual valence-band and conduction-band offsets.

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页码：1404 / 1406

页数：3

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