INHOMOGENEOUS DIELECTRICS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：19

作者：

LIM, S ^{[1
]}

RYU, JH ^{[1
]}

WAGER, JF ^{[1
]}

CASAS, LM ^{[1
]}

机构：

[1] USA,COMMAND LAB,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

THIN SOLID FILMS | 1993年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90643-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Compositionally inhomogeneous dielectric layers are realized by plasma-enhanced chemical vapor deposition (PECVD) growth of silicon oxynitride (SiON) layers. The gases used for growing inhomogeneous SiON layers are silane (SiH4), nitrogen (N-2) and nitrous oxide (N2O). The flow rates of SiH4 and N-2 are kept constant and real-time control of the N2O flow rate is achieved using a Techware PAL-68000 process controller. Linearly graded and superlattice-like SION layers with refractive indices varying from 1.46 to 2.05 are designed and fabricated. The compositional profile is analyzed by Auger electron spectroscopy sputter profiling. A ten-period rugate filter is designed and fabricated. Possible applications of inhomogeneous dielectric layers grown by PECVD include various kinds of optical filters and planar optical waveguides.

引用

页码：64 / 66

页数：3

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