FORCED TM-MODE OPERATION OF A GAALAS LASER-DIODE BY USE OF ANNEALED PROTON-EXCHANGED LINBO3 AND LITAO3 WAVE-GUIDES

被引：1

作者：

CHWALEK, JM

机构：

来源：

OPTICS LETTERS | 1995年 / 20卷 / 02期

关键词：

D O I：

10.1364/OL.20.000186

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Forced TM-mode operation of GaAlAs laser diode by use of annealed proton-exchanged LiNbO3 and LiTaO3 waveguides as the polarizing element in an external cavity is demonstrated. The results are compared with those for an external cavity that uses a bulk polarizer. The dependence of such factors as the amount and polarization of the feedback in these external cavity configurations is discussed.

引用

页码：186 / 188

页数：3

共 6 条

[1]

CLARK DF, 1983, J APPL PHYS, V54, P6218, DOI 10.1063/1.331937

[2] POLARIZATION CONTROL OF AN ANTIREFLECTION-COATED GAALAS LASER DIODE BY AN EXTERNAL OPTICAL FEEDBACK [J].