GAAS P-N-P-N LASER DIODE

被引：13

作者：

LOCKWOOD, HF ^{[1
]}

ETZOLD, KF ^{[1
]}

STOCKTON, TE ^{[1
]}

MARINELLI, DP ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1974年 / QE10卷 / 07期

关键词：

D O I：

10.1109/JQE.1974.1068200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：567 / 569

页数：3

共 9 条

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[2]

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[3] GRAPHICAL ANALYSIS OF I-V CHARACTERISTICS OF GENERALIZED P-N-P-N DEVICES [J].

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[4]

Grossman B., 1973, Applied Physics, V2, P173, DOI 10.1007/BF00884206

[5] MULTILAYER GAAS INJECTION LASER [J].

KOSONOCKY, WF ;

CORNELY, RH ;

HEGYI, IJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :176-+

[6] LARGE-OPTICAL-CAVITY (A1GA)AS-GAAS HETEROJUNCTION LASER DIODE - THRESHOLD AND EFFICIENCY [J].

KRESSEL, H ;

HAWRYLO, FZ ;

LOCKWOOD, HF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :561-+

[7] THIN SOLUTION MULTIPLE LAYER EPITAXY [J].

LOCKWOOD, HF ;

ETTENBERG, M .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) :81-+

[8] A LIGHT-ACTIVATED SEMICONDUCTOR SWITCH [J].

MEYERHOF.D ;

KEIZER, AS ;

NELSON, H .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :111-&

[9]

Nuese C. J., 1973, Journal of Electronic Materials, V2, P571, DOI 10.1007/BF02655876

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