LIGHT-INDUCED EFFECTS ON THE OPTICAL-ABSORPTION OF A-SI-H

被引：6

作者：

CABARROCAS, PRI ^{[1
]}

CHAHED, L ^{[1
]}

DREVILLON, B ^{[1
]}

THEYE, ML ^{[1
]}

机构：

[1] UNIV PIERRE & MARIE CURIE,OPT SOLIDES LAB,CNRS,UA 781,F-75252 PARIS 05,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1988年 / 104卷 / 01期

关键词：

GLOW DISCHARGES - INFRARED RADIATION - Absorption - SEMICONDUCTING SILICON - Radiation Effects - SPECTROSCOPY; ABSORPTION;

D O I：

10.1016/0022-3093(88)90181-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The modifications of the optical absorption of glow-discharge a-Si:H films upon light exposure and subsequent annealing are determined by spectroscopic ellipsometry, photothermal deflection spectroscopy and IR absorption measurements. The results show that illumination induces both reversible changes of the defect states density and irreversible morphological modifications involving hydrogen atoms.

引用

页码：59 / 61

页数：3

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