EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS

被引:206
作者
DEXTER, DL
SEITZ, F
机构
来源
PHYSICAL REVIEW | 1952年 / 86卷 / 06期
关键词
D O I
10.1103/PhysRev.86.964
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:964 / 965
页数:2
相关论文
共 7 条
[1]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[2]   SCATTERING OF ELECTRONS IN METALS BY DISLOCATIONS [J].
DEXTER, DL .
PHYSICAL REVIEW, 1952, 86 (05) :770-774
[3]   CONDUCTIVITY OF COLD-WORKED METALS [J].
DEXTER, DL .
PHYSICAL REVIEW, 1952, 85 (05) :936-937
[4]   A CALCULATION OF THE CHANGES IN THE CONDUCTIVITY OF METALS PRODUCED BY COLD-WORK [J].
KOEHLER, JS .
PHYSICAL REVIEW, 1949, 75 (01) :106-117
[5]  
KOEHLER JS, 1941, PHYS REV, V60, P398
[6]   ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].
PEARSON, GL ;
BARDEEN, J .
PHYSICAL REVIEW, 1949, 75 (05) :865-883
[7]  
Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420