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GROWTH AND CHARACTERIZATION OF LOW-TEMPERATURE ALINAS

被引：18
作者：
METZGER, RA
BROWN, AS
STANCHINA, WE
LUI, M
WILSON, RG
KARGODORIAN, TV
MCCRAY, LG
HENIGE, JA
机构：
[1] Hughes Research Laboratories, Malibu, CA 90265, 3011 Malibu Canyon Road
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)91017-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Al0.48In0.52As lattice matched to InP and grown by MBE over a temperature range of 250 to 100-degrees-C and under an As4 pressure of 1 x 10(-6) to 2 x 10(-5) Torr has been investigated. Over this temperature range of 250 to 100-degrees-C, resistivity decreases from 2 x 10(7) to 3 x 10(6)-OMEGA-cm while photoluminescence intensity decreases by two orders of magnitude. Resistivity showed little sensitivity to change in As4 overpressure over the range investigated. Single crystal samples grown in the range of 100 to 150-degrees-C showed nonstochiometric excess As of up to 1.4% as determined by secondary ion mass spectrometry, and lattice expansion of 0.1% as determined by X-ray diffraction. Samples grown at temperatures greater than 200-degrees-C showed no excess As or lattice expansion.
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页码：445 / 449
页数：5
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