ION-BEAM ASSISTED ETCHING AND DEPOSITION

被引：22

作者：

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.584876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In situ vacuum processing technology is becoming increasingly important with the increasing scale of integration and continuing shrinkage of device dimensions. Ion beams induce various chemical effects which are very promising for applications such as in situ processing technology, with the promise of improved high processing rates and low process-induced damage. The present paper is intended to review various etching and deposition techniques which utilize ion beam induced chemical effects. The effect of damage and importance of a low energy beam will also be described.

引用

页码：1927 / 1931

页数：5

共 38 条

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