POST GROWTH FABRICATION OF GAAS/ALGAAS REFLECTION MODULATORS VIA IMPURITY FREE DISORDERING

被引：15

作者：

GHISONI, M ^{[1
]}

PARRY, G ^{[1
]}

PATE, M ^{[1
]}

HILL, G ^{[1
]}

ROBERTS, J ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD S1 3JD, S YORKSHIRE, ENGLAND

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6A期

关键词：

GAAS/ALGAAS; MULTIPLE QUANTUM WELL; RAPID THERMAL ANNEALING; IMPURITY FREE VACANCY DIFFUSION; REFLECTION MODULATORS; INTEGRATION;

D O I：

10.1143/JJAP.30.L1018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Disordering of GaAs/AlGaAs multiple quantum well asymmetric Fabry-Perot modulators (AFPM) was carried out using impurity free vacancy diffusion (IFVD), involving the deposition of a SiO2 cap followed by rapid thermal annealing at 930-degrees-C. Blue shifts of up to 52 meV, while maintaining clearly resolved heavy and light hole excitons, were achieved. This enabled the production of both normally-off (contrast > 10 dB for -5 V bias) and normally-on (reflection change > 30% for - 8V) AFPM's from the same wafer, thus displaying how IFVD can be used to tailor the optoelectronic properties after growth.

引用

页码：L1018 / L1020

页数：3

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