MOS DEVICE FABRICATION USING SPUTTER-DEPOSITED GATE OXIDE AND POLYCRYSTALLINE SILICON LAYERS

被引：7

作者：

HABERLE, K ^{[1
]}

FROSCHLE, E ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN, INST SEMICOND ELECTR, BEREICH SONDERFORSCH FESTKORPERELEKTR 56, D-5100 AACHEN, GERMANY

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 08期

关键词：

D O I：

10.1016/0038-1101(80)90102-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：855 / +

页数：1

共 28 条

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[5]

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[6]

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[7] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[8] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

CASTRO, PL ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+

[9]

CLEMENS JT, 1974, EL SOC M ABSTR SAN F, P125

[10]

CORMIA RL, 1969, SOLID ST TECH DEC, P58

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