CHEMICAL-VAPOR DEPOSITION OF METALLIC COPPER FILM IN THE PRESENCE OF OXYGEN

被引：12

作者：

HAMMADI, Z

LECOHIER, B

DALLAPORTA, H

机构：

[1] GPEC URA-CNRS 783, Faculté des Sciences de Luminy, Case 901 13288 Marseille

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 10期

关键词：

D O I：

10.1063/1.353748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical-vapor deposition of copper using copper (II) bis(acetylacetonate) is reported. It is shown that at 0.1 Torr and temperatures in the range of 250-350-degrees-C, the deposition occurs only if oxygen is added in the reactor. Auger spectroscopy, x-ray-diffraction, and resistance measurements as a function of temperature lead to the conclusion that metallic copper is deposited.

引用

页码：5213 / 5215

页数：3

共 16 条

[1]

Awaya N., 1991, 1991 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.91CH3017-1), P37, DOI 10.1109/VLSIT.1991.705978

[2]

BEACH DB, 1990, RES SOC S P, V30, P73

[3] INITIAL OXIDATION OF CU(100) SINGLE-CRYSTAL SURFACES - ELECTRON SPECTROSCOPIC INVESTIGATION [J].