COMPARATIVE BEHAVIOR AND PERFORMANCES OF MESFET AND HEMT AS A FUNCTION OF TEMPERATURE

被引：18

作者：

GOBERT, Y ^{[1
]}

SALMER, G ^{[1
]}

机构：

[1] UNIV SCI & TECH LILLE FLANDRES ARTOIS,DEPT HYPERFREQUENCES & SEMICOND,F-59655 VILLENEUVE DASCQ,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 03期

关键词：

D O I：

10.1109/16.275213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an experimental study of MESFET and conventional HEMT behavior as a function of temperature and limited to the range from 293 K to 393 K. We review the main phenomena appearing under high temperature conditions, and their effects on FET performances. The most important degradations concern, except the mobility in HEMT, the noise figure that can increase drastically between 293 K and 393 K. However, we present structures which seem to be less sensitive to temperature variations.

引用

页码：299 / 305

页数：7