EFFECT OF PREEXPONENTIAL FACTORS ON TEMPERATURE BEHAVIOR OF VRH CONDUCTIVITY

被引：9

作者：

AGRINSKAYA, NV

KOZUB, VI

机构：

[1] A.F.Ioffe Physico-Technical Institute, St.-Petersburg

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 11期

关键词：

D O I：

10.1016/0038-1098(94)90001-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An effect of preexponentials on variable range hopping (VRH) conductivity near the crossover from Mott law to Efros-Shklovskii (ES) law is analyzed. These factors rho(0,1)(T) are shown to affect significantly the crossover details and may even imitate the crossover. As demonstrated for doped CdTe crystals at 0.4 - 4K an account for rho(0)(T) lifts the crossover-like behavior for some samples actually exhibiting purely Mott-type VRH while for higher resistivity samples trends to ES behavior are still observed. A proper account for the preexponentials also leads to a drastic reestimate of localization length a and dielectric constant kappa. The conclusions are also evidenced by positive magnetoresistance measurements.

引用

页码：853 / 857

页数：5

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