BOUND MULTIEXCITON LUMINESCENCE IN BORON-DOPED SILICON - EXCITATION-LEVEL DEPENDENCE AND RECOMBINATION KINETICS

Low-temperature luminescence associated with bound multiexciton complexes in boron-doped silicon has been investigated with emphasis on the excitation-level dependence of the luminescence spectra. In order to interpret the experimental results, we have proposed a model for the formation and decay processes of bound multiexciton complexes. It has been found that the excitation-level dependence of the bound multiexciton luminescence in boron-doped silicon is consistent with the excitation behavior calculated from the rate equations based on the model for the recombination kinetics of bound multiexciton complexes. © 1979, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.